description: the central semiconductor CMLT591E type is a pnp low v ce(sat) 1.0 amp transistor, epoxy molded in a space saving picomini? sot-563 surface mount package and designed for applications requiring a high current capability and low saturation voltages. marking code: l59 maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 80 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 1.0 a base current i b 200 ma collector current (peak) i cm 2.0 a power dissipation p d 250 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 500 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =60v 100 na i ebo v eb =4.0v 100 na bv cbo i c =100a 80 v bv ceo i c =10ma 60 v bv ebo i e =100a 5.0 v v ce(sat) i c =500ma, i b =50ma 0.20 v v ce(sat) i c =1.0a, i b =100ma 0.40 v v be(sat) i c =1.0a, i b =100ma 1.1 v v be(on) v ce =5.0v, i c =1.0a 1.0 v h fe v ce =5.0v, i c =1.0ma 200 h fe v ce =5.0v, i c =500ma 200 600 h fe v ce =5.0v, i c =1.0a 50 h fe v ce =5.0v, i c =2.0a 15 f t v ce =10v, i c =50ma, f=100mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 10 pf CMLT591E surface mount picomini tm pnp silicon transistor sot-563 case central semiconductor corp. tm r2 (7-august 2003) c c c c e b
central semiconductor corp. tm sot-563 case - mechanical outline CMLT591E surface mount picomini tm pnp silicon transistor a b c h g f d e e r0 12 3 65 4 r2 (7-august 2003) lead code: 1) collector 2) collector 3) base 4) emitter 5) collector 6) collector pins 1, 2, 5 and 6 are common. marking code: l59
|
